Engineering of defects located in grains or at grain boundaries is central to the development of functional materials. Although there is a surge of interest in the formation, migration and annihilation of defects during ion and plasma irradiation of bulk materials, these processes are rarely assessed in low-dimensional materials and remain mostly unexplored spectroscopically at the micrometre scale due to experimental limitations. Here, we use a hyperspectral Raman imaging scheme providing high selectivity and diffraction-limited spatial resolution to examine plasma-induced damage in a polycrystalline graphene film. Measurements conducted before and after very low-energy (11–13 eV) ion bombardment show defect generation in graphene grains following a zero-dimensional defect curve, whereas domain boundaries tend to develop as one-dimensional defects. Damage generation is slower at grain boundaries than within the grains, a behaviour ascribed to preferential self-healing. This evidence of local defect migration and structural recovery in graphene sheds light on the complexity of chemical and physical processes at the grain boundaries of two-dimensional materials.

位于晶粒或晶界的缺陷工程对功能材料的开发至关重要。尽管在散装材料的离子和等离子体辐射过程中缺陷的形成，迁移和an灭引起了人们的关注，但这些过程很少在低尺寸材料中进行评估，由于实验的局限性，在微米范围内仍未进行光谱研究。在这里，我们使用提供高选择性和衍射受限空间分辨率的高光谱拉曼成像方案来检查等离子体诱导的多晶石墨烯薄膜中的损伤。在极低能量（11-13 eV）离子轰击之前和之后进行的测量表明，石墨烯晶粒中的缺陷产生遵循零维缺陷曲线，而域边界倾向于发展为一维缺陷。晶粒边界处的损伤产生比晶粒内部慢，这归因于优先自我修复的行为。石墨烯中局部缺陷迁移和结构恢复的这一证据揭示了二维材料晶界处化学和物理过程的复杂性。