The high dielectric constant ZrO₂, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO₂ gate dielectric. The electrical properties of ZrO₂ films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO₂ as well as optimization of low-temperature solution process. The applications of ZrO₂ and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.

中文翻译：

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高介电常数氧化锆基材料在栅介电中的研究进展

作为下一代半导体器件最有希望的栅极介电材料之一，高介电常数ZrO ₂有望作为一种新的高k介电层被引入，以取代传统的SiO ₂栅极介电层。介绍了通过各种沉积方法制备的ZrO ₂薄膜的电学性质以及改善其电学性质的主要方法，包括非金属元素的掺杂，拟二元合金体系的金属掺杂设计，新的堆叠结构，与有机材料的耦合和利用。 ZrO ₂的结晶以及低温固溶工艺的优化。ZrO ₂的应用 展望了其低功耗，高性能的金属氧化物半导体场效应晶体管（MOSFET）和薄膜晶体管（TFT）中的复合薄膜材料。