Ultralow-Transition-Energy Organic Complex on Graphene for High-Performance Shortwave Infrared Photodetection.,Advanced Materials

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Ultralow-Transition-Energy Organic Complex on Graphene for High-Performance Shortwave Infrared Photodetection.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-07-19 , DOI: 10.1002/adma.202002628
Muhammad Ahsan Iqbal _{1,

2} , Adeel Liaqat _{1,

2} , Sabir Hussain _{1,

2} , Xinsheng Wang _{1,

2} , Misbah Tahir _{1,

2} , Zunaira Urooj _{1,

2} , Liming Xie _{1,

2}

Affiliation

Room‐temperature, high‐sensitivity, and broadband photodetection up to the shortwave infrared (SWIR) region is extremely significant for a wide variety of optoelectronic applications, including contamination identification, thermal imaging, night vision, agricultural inspection, and atmospheric remote sensing. Small‐bandgap semiconductor‐based SWIR photodetectors generally require deep cooling to suppress thermally generated charge carriers to achieve increased sensitivity. Meanwhile, the photogating effect can provide an alternative way to achieve superior photosensitivity without the need for cooling. The optical photogating effect originates from charge trapping of photoinduced carriers at defects or interfaces, resulting in an extremely high photogain (10⁶ or higher). Here, a highly sensitive SWIR hybrid photodetector, fabricated by integrating an organic charge transfer complex on a graphene transistor, is reported. The organic charge transfer complex (tetrathiafulvalene–chloranil) has an exceptional low‐energy intermolecular electronic transition down to 0.5 eV, with the aim of achieving efficient SWIR absorption for wavelengths greater than 2 µm. The photogating effect at the organic complex and graphene interface enables an extremely high photogain and a high detectivity of ≈10¹³ Jones, along with a response time of 8 ms, at room temperature for a wavelength of 2 µm.

中文翻译：

石墨烯上的超低转换能量有机配合物，用于高性能短波红外光电检测。

室温，高灵敏度和宽带光电检测，直至短波红外（SWIR）区域，对于各种光电应用（包括污染物识别，热成像，夜视，农业检查和大气遥感）都非常重要。基于小带隙半导体的SWIR光电探测器通常需要深度冷却以抑制热产生的载流子，以提高灵敏度。同时，光闸效应可以提供一种无需冷却即可实现优异光敏性的替代方法。光学光闸效应源自缺陷或界面处的光生载流子的电荷俘获，从而导致极高的光增益（10 ⁶或更高）。在此，报道了通过在石墨烯晶体管上集成有机电荷转移络合物而制造的高灵敏度SWIR混合光电探测器。有机电荷转移复合物（四硫富瓦烯-氯甲腈）具有低至0.5 eV的出色的低能分子间电子跃迁，目的是在大于2 µm的波长下实现有效的SWIR吸收。在有机络合物和石墨烯界面处的光闸效应可在室温下以2 µm的波长实现极高的光增益和约^{10 13} Jones的高检测率，以及8 ms的响应时间。

更新日期：2020-09-15

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