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Influence of UV Rays on the Volt-Capacity Characteristic of SnO 2 :Co Sensor of Vapors of Hydrogen Peroxide
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.5 ) Pub Date : 2020-07-20 , DOI: 10.3103/s1068337220020048
M. S. Aleksanyan , A. G. Sayunts , A. A. Zakaryan , V. M. Aroutiounian , V. M. Arakelyan , G. E. Shakhnazaryan

Abstract

A ceramic target based on cobalt doped SnO2 metal oxide was synthesized by the solid-phase reaction method. The target was used in the process of high-frequency magnetron sputtering. A thin SnO2:Co film was deposited, which is sensitive to hydrogen peroxide vapor. The current-voltage characteristics of the SnO2:Co sensor were measured in the presence of hydrogen peroxide vapor in the environment while ultraviolet light was exposed to the sensor at room temperature. It was shown that the sensitivity of the SnO2:Co film increases by about 1.6 times when exposed to ultraviolet rays.



中文翻译:

紫外线对过氧化氢蒸气SnO 2:Co传感器的容量特性的影响

摘要

通过固相反应法合成了基于钴掺杂的SnO 2金属氧化物的陶瓷靶。该靶材用于高频磁控溅射工艺中。沉积了对过氧化氢蒸气敏感的SnO 2:Co薄膜。SnO 2:Co传感器的电流-电压特性是在环境中有过氧化氢蒸气存在的情况下测量的,而室温下紫外光则暴露于传感器中。已经表明,当暴露于紫外线时,SnO 2:Co膜的灵敏度提高了约1.6倍。

更新日期:2020-07-20
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