Abstract

The analysis of the effect of radiation exposure on integrated circuits is carried out. The methods of constructing passively fault tolerant irradiated microcircuits are considered. A review of a method for indirectly measuring the fault tolerance of such microcircuits built using various constant element-by-element redundancy and without redundancy is given.

中文翻译：

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电子元件对辐射作用的抵抗力

摘要

进行了辐射暴露对集成电路的影响的分析。考虑了构建被动容错辐射微电路的方法。给出了一种用于间接测量使用各种恒定的逐元素冗余且没有冗余的微电路的容错能力的方法的综述。