The generation of second harmonic (SH) in the structure (SiO2/MnF2/graphene)N/ZrO2 has been investigated with the matrix transfer method. The theoretical simulation results show that the effect of the graphene (Gr) on SH outputs above or below the surface is obvious. The SH outputs compared with the same structure only without the Gr layer are greatly enhanced, even about two or three orders at some special cases. Also, the position and intensity of the SH outputs can be effectively tuned by an external magnetic field. An optimal structure is determined through investigating the effect of the Gr positions and dielectrics on the SH outputs. Finally, a critical cycle unit $$N = 8$$ is checked out, while the SH outputs begin to decrease once $$N > 8$$ . These interesting results may be helpful to the development and utilization of nonlinear devices in the THz frequency field.

中文翻译：

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石墨烯反铁磁光子晶体中可调谐二次谐波产生

已经用基体转移方法研究了结构 (SiO2/MnF2/graphene)N/ZrO2 中二次谐波 (SH) 的产生。理论模拟结果表明，石墨烯（Gr）对表面上方或下方的 SH 输出的影响是明显的。SH 输出与仅没有 Gr 层的相同结构相比大大增强，在某些特殊情况下甚至大约两三个阶。此外，外部磁场可以有效地调整 SH 输出的位置和强度。通过研究 Gr 位置和电介质对 SH 输出的影响，确定了最佳结构。最后，检出一个临界循环单元 $$N = 8$$，而一旦 $$N > 8$$ ，SH 输出开始减少。