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A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications
Circuit World ( IF 0.8 ) Pub Date : 2020-04-02 , DOI: 10.1108/cw-05-2019-0046
Min Liu , Panpan Xu , Jincan Zhang , Bo Liu , Liwen Zhang

Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications.,A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks.,By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz.,The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

中文翻译:

用于 C 波段应用的 4.2 至 5.4 GHz 堆叠式 GaAs HBT 功率放大器

功率放大器 (PA) 在无线通信中发挥着重要作用,因为它们主导着系统性能。高线性宽带 PA 对多频段系统实施的潜在用途具有重要价值。本文的目的是提出一种共源共栅功率放大器架构,以实现 4.2∼5.4 GHz 应用的高功率和高效率要求。具有堆叠共基极配置的异质结双极晶体管 (HBT) 的共发射极 (CE) 配置是用于实现高功率。T型匹配网络用作输入匹配网络。为了增加带宽,使用两个 L 网络实现了输出匹配网络。通过使用所提出的方法,堆叠 PA 的最大饱和输出功率为 26.2 dBm,芯片尺寸为 1.17 × 0。59 mm2 和 46.3% 的最大功率附加效率。PA 显示宽带小信号增益,工作频率范围内的变化小于 3 dB。所提出的 PA 的饱和输出功率在 4.2 至 5.4 GHz 之间高于 25 dBm。4.2 至 5.4 GHz 堆叠 PA 的设计采用的技术是 2 µm 砷化镓 HBT 工艺。基于所提出的方法,与传统的 CE 或共源放大器相比,由于高输出堆叠阻抗,可以实现 3 dB 的更好的功率性能。4 GHz 堆叠 PA 是 2 µm 砷化镓 HBT 工艺。基于所提出的方法,与传统的 CE 或共源放大器相比,由于高输出堆叠阻抗,可以实现 3 dB 的更好的功率性能。4 GHz 堆叠 PA 是 2 µm 砷化镓 HBT 工艺。基于所提出的方法,与传统的 CE 或共源放大器相比,由于高输出堆叠阻抗,可以实现 3 dB 的更好的功率性能。
更新日期:2020-04-02
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