Abstract Defects in wide-band-gap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optically controlled spin qubits with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies generated via proton irradiation as a function of implantation depth. We show clear evidence of dephasing interactions between the silicon vacancies and the spin environment of the bulk crystal. These results will inform further routes toward fabrication of scalable silicon carbide devices and studies of spin interactions in high-density ensembles of defects.

中文翻译：

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自旋相干性作为质子辐照 4H-SiC 中硅空位高密度集合的深度函数

摘要 宽带隙半导体中的缺陷为量子信息和固态材料传感的应用提供了途径。碳化硅中的硅空位最近成为光控自旋量子位的新候选者，与金刚石中的氮空位相比具有显着的材料优势。在这项工作中，我们研究了通过质子辐射产生的硅空位的相干性作为注入深度的函数。我们展示了硅空位和块状晶体的自旋环境之间的移相相互作用的明确证据。这些结果将为制造可扩展的碳化硅器件和研究高密度缺陷集合中的自旋相互作用提供进一步的途径。