Abstract Two Ge1-xSnx/Si0.1Ge0.85Sn0.05 (x = 7.3% and 8.5%) multi-quantum wells (MQWs) based light emitting diodes (LEDs) were designed and fabricated to achieve efficient light emission in the ∼2 μm wavelength band. Electroluminescence (EL) at wavelengths of 1980 nm (0.626 eV) and 2060 nm (0.602 eV) from the MQWs light emitting diodes were observed at room temperature. Super-linear dependence between the injected current density and EL intensity illustrates the high band-to-band radiative recombination efficiency. Theoretical calculations using deformation potentials theory reveal that the type-I band alignment is formed, and correspond well with the quantum confinement effect of the direct-bandgap transitions of n1Γ - n1HH. These results indicate that GeSn/SiGeSn MQW-LEDs is a promising full group-IV silicon-based light source in the 2 μm waveband.

中文翻译：

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用于 2 μm LED 的 I 型 GeSn/SiGeSn 多量子阱的室温直接带隙电致发光

摘要 设计并制造了两个基于 Ge1-xSnx/Si0.1Ge0.85Sn0.05 (x = 7.3% 和 8.5%) 的多量子阱 (MQW) 发光二极管 (LED) 以实现~2 μm 的高效发光。波长带。在室温下观察到 MQW 发光二极管在 1980 nm (0.626 eV) 和 2060 nm (0.602 eV) 波长下的电致发光 (EL)。注入电流密度和 EL 强度之间的超线性相关性说明了高带间辐射复合效率。使用变形势理论的理论计算表明，形成了 I 型能带排列，并且与 n1Γ - n1HH 的直接带隙跃迁的量子限制效应很好地对应。