Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics,Physica Status Solidi (A) - Applications and Materials Science

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Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-17 , DOI: 10.1002/pssa.202000254
Neha Mohta ₁ , Roop K. Mech ₁ , Sooraj Sanjay ₁ , R. Muralidharan ₁ , Digbijoy N. Nath ₁

Affiliation

Herein, a multilayer MoS₂‐based low‐power synaptic transistor using Ta₂O₅ as a back‐gate dielectric for mimicking the biological neuronal synapse is reported. The use of high‐k dielectric allows for a lower‐voltage swing compared with using conventional SiO₂, thus offering an attractive route to low‐power synaptic device architectures. Exfoliated MoS₂ is utilized as the channel material, and the hysteresis in the transfer characteristics of the transistor is exploited to demonstrate excitatory and inhibitory postsynaptic currents, long‐term potentiation, and long‐term depression (LTP/LTD), indirect spike timing‐dependent plasticity (STDP) based on single and sequential gate (V_g) pulses, respectively. The synapse had achieved a 35% weight change in channel conductance within 15 electrical pulses for negative synaptic gate pulse and 28% change for positive synaptic gate pulse. A complete tunability of weight in the synapse by spike amplitude‐dependent plasticity (SADP) at a low voltage of 4 V is also demonstrated.

中文翻译：

基于带有高k Ta2O5电介质的背栅MoS2场效应晶体管的人工突触

在此，报道了使用Ta ₂ O ₅作为模仿生物神经元突触的背栅电介质的，基于MoS ₂的多层低功率突触晶体管。与使用传统的SiO ₂相比，使用高k电介质可以实现更低的电压摆幅，从而为通往低功率突触设备架构提供了诱人的途径。剥落的MoS ₂被用作通道材料，并利用晶体管传输特性中的磁滞现象来展示兴奋性和抑制性突触后电流，长期增强和长期抑制（LTP / LTD），间接尖峰时序-基于单个和顺序浇口的相关可塑性（STDP）（V _g）脉冲。对于负突触门脉冲，在15个电脉冲内，突触已实现了35％的通道电导权重变化，对于正突触门脉冲，其突触在28％的变化内。还证明了在4 V的低压下，突波振幅依赖性可塑性（SADP）可以使突触的重量完全可调。

更新日期：2020-07-17

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