We fabricated a pixelated silicon sensor with a junction field effect transistor (JFET) on a $650\mathrm{\mu }\mathrm{m}$ thick, high-resistivity ($>$ 5 k$\mathrm{\Omega }$ $\cdot$cm) n-type double-sided polished 6-in. silicon wafer using a double-sided fabrication process. The JFET, which had a cylindrical structure, acted as a switch to read out charges accumulated in the pixelated sensor. We investigated the electrical characteristics of the pixelated sensor, which had a size of $100\mathrm{\mu }\mathrm{m}$ $\times$ $100\mathrm{\mu }\mathrm{m}$. We also measured the drain current as a function of the drain voltage for different gate voltages to examine the switching performance of the JFET and optimized the design parameters of the pixelated sensor for the proper functioning of the switch. Furthermore, the pixelated sensor’s responses under illumination by a light-emitting diode and X-rays were measured. The electrical characteristics and responses of the pixelated sensors are presented in this paper.

我们制造了一个像素化硅传感器，在其上具有结型场效应晶体管（JFET） $650\mathrm{\mu }\mathrm{米}$ 厚，高电阻率（$>$ 5千$\mathrm{\Omega }$ $\cdot$厘米）n型双面抛光6英寸。硅晶片采用双面制造工艺。具有圆柱结构的JFET用作读取像素化传感器中累积的电荷的开关。我们调查了像素化传感器的电特性，该传感器的尺寸为$100\mathrm{\mu }\mathrm{米}$ $\times$ $100\mathrm{\mu }\mathrm{米}$。我们还针对不同的栅极电压测量了漏极电流与漏极电压的关系，以检查JFET的开关性能，并优化了像素化传感器的设计参数，以确保开关正常工作。此外，测量了像素化传感器在发光二极管和X射线照射下的响应。本文介绍了像素传感器的电气特性和响应。