Abstract By introducing a double barrier design, a high performance InAs/InAsSb type-II superlattice mid-wavelength infrared photodetector has been demonstrated. The photodetector exhibits a cut-off wavelength of ~4.50 µm at 150 K. At 150 K and −120 mV applied bias, the photodetector exhibits a dark current density of 1.21 × 10−5 A/cm2, a quantum efficiency of 45% at peak responsivity (~3.95 µm), and a specific detectivity of 6.9 × 1011 cm·Hz1/2/W. The photodetector shows background-limited operating temperature up to 160 K.

中文翻译：

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具有双势垒的高性能 InAs/InAsSb Type-II 超晶格中波长红外光电探测器

摘要 通过引入双势垒设计，证明了高性能 InAs/InAsSb II 型超晶格中波长红外光电探测器。光电探测器在 150 K 下的截止波长为 ~4.50 µm。在 150 K 和 -120 mV 施加偏压下，光电探测器的暗电流密度为 1.21 × 10−5 A/cm2，量子效率为 45%峰值响应度 (~3.95 µm)，比检测率为 6.9 × 1011 cm·Hz1/2/W。光电探测器显示背景限制工作温度高达 160 K。