Abstract

The chemical mechanical planarization (CMP) performance of the Si-face and C-face 6H-SiC substrates were compared using potassium permanganate (KMnO₄) as an oxidizer and the alumina (Al₂O₃) nanoparticles as the abrasive particles over a pH range from 2 to 10. The results indicate that there was a significant difference in the CMP performance between Si-face and C-face 6H-SiC substrates, indicating that the CMP process was sensitive to the surface polarity of the 6H-SiC substrates. A higher material removal rate (MRR) was obtained during the CMP of C-face 6H-SiC substrates, as compared to that of Si-face 6H-SiC substrates. The maximum MRR of the C-face 6H-SiC substrates was reached to 6412 nm/h with an average surface roughness Ra of 0.54 nm when using the slurries containing 2 wt% alumina nanoparticles, 0.05 M KMnO₄ at pH 2. While the Si-face 6H-SiC substrates was 1554 nm/h with an average surface roughness Ra of 0.53 nm. Furthermore, the polishing mechanism was also discussed based on the MRR, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) analysis of the dipped and polished 6H-SiC surfaces.

中文翻译：

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表面极性对6H-SiC衬底CMP行为的影响

摘要

使用高锰酸钾（KMnO ₄）和氧化铝（Al ₂ O ₃）比较了Si面和C面6H-SiC衬底的化学机械平坦化（CMP）性能纳米颗粒作为磨料颗粒，在2至10的pH范围内。结果表明，Si面和C面6H-SiC衬底之间的CMP性能存在显着差异，这表明CMP工艺对硅表面敏感6H-SiC衬底的表面极性。与Si面6H-SiC衬底相比，在C面6H-SiC衬底的CMP期间获得了更高的材料去除率（MRR）。当使用含有2 wt％氧化铝纳米颗粒，0.05 M KMnO ₄的浆料时，C面6H-SiC衬底的最大MRR达到6412 nm / h，平均表面粗糙度Ra为0.54 nm。Si面6H-SiC衬底的速度为1554 nm / h，平均表面粗糙度Ra为0.53 nm。此外，还基于浸渍和抛光的6H-SiC表面的MRR，原子力显微镜（AFM）和X射线光电子能谱（XPS）分析对抛光机理进行了讨论。