Abstract

The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is compressed. The limiting (critical) thickness of the semipolar AlN layer on the Si(001) substrate is determined to be ~7.5 μm. When the film thickness exceeds this value, an ensemble of cracks is formed in the film, leading to its total cracking and exfoliation from the substrate. The semipolar epitaxial AlN films with a thickness of more than 40 μm are grown on hybrid SiC/Si substrates without cracking and exfoliation from the substrate.

中文翻译：

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Si（001）和混合SiC / Si（001）衬底上大块半极性AlN薄膜的外延生长

摘要

已经研究了在Si（001）和混合SiC / Si（001）衬底上生长无裂纹的大块外延半极性AlN膜（厚度大于7μm）的可能性。发现在Si衬底上生长的AlN层被扩展，而在混合SiC / Si衬底上生长的AlN层被压缩。Si（001）基板上的半极性AlN层的极限（临界）厚度确定为〜7.5μm。当膜厚度超过该值时，在膜中形成裂纹的整体，导致其完全龟裂和从基材剥离。在混合SiC / Si衬底上生长厚度大于40μm的半极性外延AlN膜，而不会从衬底上产生裂纹和剥离。