Abstract

The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.

中文翻译：

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飞秒激光退火基于锗和硅的多层薄膜结构

摘要

飞秒激光退火对非晶硅和锗的薄膜多层结构的薄膜玻璃结构进行了等离子体退火的过程研究。已经通过扫描电子显微镜法检测到在被照射的膜的表面上形成周期性结构。拉曼光谱分析表明，由于暴露于飞秒激光脉冲，在不存在非晶硅层结晶的情况下，非晶锗结晶，并且锗和硅层的混合取决于脉冲能量密度而发生。