To realize next generation electronics, liquid phase crystallization of germanium based materials on quartz substrates is investigated by continuous wave laser annealing system which enables microsecond annealing. As a result, large grain polycrystalline germanium thin film with ∼0.6% tensile strain has successfully grown on quartz substrates. Moreover, we have applied this method on germanium-tin thin film growth and realized germanium-tin crystals with high substitutional tin concentration (up to ∼13%). By using these films, modulation phenomena of tin concentration in the crystals depending on annealing time were observed. From the phenomena, we could also closely discuss about strong correlation of substitutional Sn concentration on Raman signals. These findings and discussions will facilitate the study of germanium-tin thin film growth and characterization.

中文翻译：

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高速连续波激光退火在玻璃基板上拉伸拉伸应变多锗薄膜的生长及其在锗锡中的应用

为了实现下一代电子设备，通过能够进行微秒退火的连续波激光退火系统研究了锗基材料在石英基板上的液相结晶。结果，在石英衬底上成功地生长了具有〜0.6％拉伸应变的大晶粒多晶锗薄膜。此外，我们已经将该方法应用于锗锡薄膜的生长，并实现了具有高取代锡浓度（最高约13％）的锗锡晶体。通过使用这些膜，观察到晶体中锡浓度根据退火时间的调制现象。从这些现象，我们还可以密切讨论拉曼信号上替代Sn浓度的强相关性。