We report the electrical and optical properties of gallium nitride grown by halogen-free vapor phase epitaxy (HF-VPE). The electron mobility of the HF-VPE-GaN layers was found to be comparable to or better than the GaN layers obtained using MOCVD. The positron annihilation spectroscopy analyses revealed that the density of the electroneutral or negatively charged vacancy-type defects in the HF-VPE-GaN layers was below the detection limit (≤10 15 cm −3 ), equivalent to that of a defect-free hydride vapor phase epitaxy (HVPE)-GaN reference sample. Our study shows that the HF-VPE technique can be employed to achieve high-quality and cost-effective bulk crystal and epitaxial layer growth for GaN devices.

中文翻译：

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通过无卤素气相外延生长高质量GaN

我们报告通过无卤素气相外延（HF-VPE）生长的氮化镓的电学和光学性质。发现HF-VPE-GaN层的电子迁移率与使用MOCVD获得的GaN层相当或更好。正电子an没光谱分析表明，HF-VPE-GaN层中电中性或带负电荷的空位型缺陷的密度低于检测极限（≤1015 cm -3），相当于无缺陷氢化物的密度气相外延（HVPE）-GaN参考样品。我们的研究表明，HF-VPE技术可用于实现GaN器件的高质量且具有成本效益的块状晶体和外延层生长。