High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low temperature atomic layer deposition process as the gate insulator. Besides, the effects of source/drain material, ITO film and Mo metal, are also studied and compared in this work. With the optimized process condition, the devices with ITO source/drain exhibit a high ION/IOFF current ratio of ~4.25 × 10 11 , a lower sub-threshold swing value of 0.087 V/decade, a desirable positive threshold voltage value of 0.1379 V and an acceptable field effect mobility of 19.69 cm 2 /Vs. while it also shows excellent reliability characteristic and low hysteresis. These results may appear highly promising potentials for the next generation fully transparent flexible display application.

中文翻译：

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无色聚酰亚胺基板上具有 ALD-HfO2 栅极绝缘体的高性能透明 a-IGZO 薄膜晶体管


采用低温原子层沉积工艺形成的高质量HfO2介电薄膜作为栅极绝缘体，在无色聚酰亚胺塑料基板上成功制备了高性能透明非晶氧化铟镓锌薄膜晶体管（a-IGZO TFT）。此外，本文还研究并比较了源/漏材料、ITO 薄膜和 Mo 金属的影响。通过优化的工艺条件，具有 ITO 源极/漏极的器件表现出约 4.25 × 10 11 的高 ION/IOFF 电流比、0.087 V/decade 的较低亚阈值摆幅值、0.1379 V 的理想正阈值电压值可接受的场效应迁移率为19.69 cm 2 /Vs。同时它还表现出优异的可靠性特性和低磁滞。这些结果对于下一代全透明柔性显示应用来说可能具有非常有前景的潜力。