Abstract A DDR3 SDRAM test setup implemented on the Griffin III test system from HILEVEL Technologies is used to analyse the row hammer bug. Row hammer pattern experiments are compared to standard retention tests for different manufacturing technologies. The row hammer effect is depending on the number of stress activation cycles. The analysis is extended to an avoidance scheme with refreshes similar to the Target Row Refresh scheme for the DDR4 SDRAM technology.

中文翻译：

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DDR3 SDRAM 行锤规避分析

摘要 使用在 HILEVEL Technologies 的 Griffin III 测试系统上实现的 DDR3 SDRAM 测试装置来分析行锤错误。将行锤模式实验与不同制造技术的标准保持测试进行比较。排锤效应取决于应力激活循环的次数。分析扩展到具有类似于 DDR4 SDRAM 技术的目标行刷新方案的刷新的避免方案。