Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary compounds, are promising electronic and optoelectronic materials for the applications in light emitting diodes, lasers, field emitters, photodetectors, artificial photosynthesis, and solar cells. Owing to their direct bandgaps ranging from near infra-red to deep ultraviolet. In recent years, the growth of group-III nitride nanostructures has been extensively explored. Herein, we provide a comprehensive review on the rational synthesis, fundamental properties and promising applications of group-III nitride nanostructures. Group-III nitride nanostructures with diverse morphologies, their corresponding synthesis methods and formation mechanisms involved are systematically compared and discussed, as well as the detailed factors that influence the optical and electrical properties of the nanostructures. The recent achievements gained in the fields of III-nitride nanostructures are highlighted, including light emitting diodes, laser diodes, photodetectors, solar cells, artificial photocatalysis, nanosensors, and nanogenerators. Finally, some perspectives and outlook on the future developments of III-nitride nanostructures are commented.

III族氮化物半导体，包括AlN，GaN，InN及其三元，四元化合物，是有前途的电子和光电材料，可用于发光二极管，激光器，场发射器，光电探测器，人工光合作用和太阳能电池。由于它们的直接带隙范围从近红外到深紫外线。近年来，已经广泛地探索了III族氮化物纳米结构的生长。本文中，我们对III族氮化物纳米结构的合理合成，基本性质和有希望的应用进行了全面综述。系统地比较和讨论了具有不同形态的III族氮化物纳米结构，其相应的合成方法和形成机理，以及影响纳米结构的光学和电学性质的详细因素。着重介绍了III族氮化物纳米结构领域的最新成就，包括发光二极管，激光二极管，光电探测器，太阳能电池，人工光催化，纳米传感器和纳米发电机。最后，对III族氮化物纳米结构的未来发展提出了一些观点和展望。