There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant. In this work, LaNiO3/Ba0.67Sr0.33TiO3 (LNO/BST) thin film and SrTiO3(STO)/LNO/BST/SrTiO3 (STO) were prepared by using radio frequency (RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes (Au or Pt) to improve the electric breakdown strength and the leakage current of the LNO/BST thin film. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that these multilayer thin films show compact, smooth and uniform morphologies. The leakage current density of STO/LNO/BST/STO thin film was decreased by one order of magnitude and breakdown strength of STO/LNO/BST/STO thin film was enhanced from 0.72 to 1.26 MV·cm−1 compared with that of LNO/BST thin film. Moreover, the dielectric constant of the STO/LNO/BST/STO thin film keeps at the same level as that of LNO/BST thin film, and dielectric loss of the STO/LNO/BST/STO thin film was decreased slightly compared with that of LNO/BST thin film.

中文翻译：

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SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3异质结薄膜的漏电流特性

迫切需要探索在不降低高介电常数的情况下提高铁电薄膜电容器击穿强度的新方法。在这项工作中，使用射频（RF）磁控溅射技术制备了 LaNiO3/Ba0.67Sr0.33TiO3（LNO/BST）薄膜和 SrTiO3（STO）/LNO/BST/SrTiO3（STO），并制备了超薄 STO 绝缘体层。插入 LNO/BST 和金属电极（Au 或 Pt）之间，以提高 LNO/BST 薄膜的电击穿强度和漏电流。X 射线衍射 (XRD) 和扫描电子显微镜 (SEM) 研究表明，这些多层薄膜显示出致密、光滑和均匀的形态。与LNO相比，STO/LNO/BST/STO薄膜的漏电流密度降低了一个数量级，STO/LNO/BST/STO薄膜的击穿强度从0.72提高到1.26 MV·cm-1 /BST 薄膜。此外，STO/LNO/BST/STO薄膜的介电常数与LNO/BST薄膜的介电常数保持在同一水平，STO/LNO/BST/STO薄膜的介电损耗较之略有下降LNO/BST 薄膜。