Irradiation with a single spatially Gaussian-shaped nanosecond laser pulse in the melting regime can result in a characteristic annular change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In a recent work we have investigated the induced changes in the surface topography upon exposure to wavelengths in the visible and near infrared spectral region. Irradiation in the UV requires a more detailed analysis due to the enhanced absorption of the material. In the present analysis, we determine under which conditions our previous model can be used and the corresponding results are presented.

中文翻译：

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硅单紫外纳秒脉冲激光表面修饰的建模

在熔化状态下用单个空间高斯型纳秒激光脉冲进行辐照会导致结晶硅的表面形态发生特征性的环形变化。这已经在各种情况下进行了实验验证，其中产生了酒窝状的表面形貌。在最近的工作中，我们研究了暴露于可见光和近红外光谱区域中的波长后表面形貌的诱导变化。由于增加了材料的吸收，因此需要对UV进行辐射分析。在当前的分析中，我们确定可以在何种条件下使用我们的先前模型，并给出相应的结果。