Fabricating GaN-based light-emitting diodes (LEDs) on a silicon (Si) substrate, which is compatible with the widely employed complementary metal–oxide–semiconductor (CMOS) circuits, is extremely important for next-generation high-performance electroluminescence devices. We conducted a systematic investigation of the optical properties of vertical LEDs, to reveal the impacts of the manufacturing process on their optical characteristics. Here, we fabricated and characterized high-efficiency GaN-based LEDs with integrated surface textures including micro-scale periodic hemispherical dimples and nano-scale random hexagonal pyramids on a 4 inch p-type Si substrate. The highly reflective Ag/TiW metallization scheme was performed to decrease downward-absorbing light. We demonstrated the influence of transferring LED epilayers from a sapphire substrate onto the Si substrate on the emission characteristics of the vertical LEDs. The removal of the sapphire substrate reduced the adverse impacts of the quantum-confined Stark effect (QCSE). The influence of integrated surface textures on the light extraction efficiency (LEE) of the vertical LEDs was studied. With the injection current of 350 mA, vertical LEDs with integrated surface textures demonstrated an excellent light output power of 468.9 mW with an emission peak wavelength of 456 nm. This work contributes to the integration of GaN-based vertical LEDs into Si-based integrated circuits.

中文翻译：

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P型硅衬底上基于GaN的垂直蓝光发光二极管的光学特性

在下一代高性能的电致发光器件中，在与广泛使用的互补金属氧化物半导体（CMOS）电路兼容的硅（Si）衬底上制造基于GaN的发光二极管（LED）极为重要。我们对垂直LED的光学特性进行了系统研究，以揭示制造工艺对其垂直光学特性的影响。在这里，我们在4英寸p型Si衬底上制造并表征了具有集成表面纹理的高效GaN基LED，这些表面纹理包括微米级周期性半球形凹痕和纳米级随机六边形金字塔。执行高反射性的Ag / TiW金属化方案以减少向下吸收的光。我们展示了将LED外延层从蓝宝石衬底转移到Si衬底上对垂直LED发射特性的影响。蓝宝石衬底的去除减少了量子限制斯塔克效应（QCSE）的不利影响。研究了集成表面纹理对垂直LED的光提取效率（LEE）的影响。具有350 mA的注入电流，具有集成表面纹理的垂直LED表现出468.9 mW的出色光输出功率，发射峰值波长为456 nm。这项工作有助于将基于GaN的垂直LED集成到基于Si的集成电路中。蓝宝石衬底的去除减少了量子限制斯塔克效应（QCSE）的不利影响。研究了集成表面纹理对垂直LED的光提取效率（LEE）的影响。具有350 mA的注入电流，具有集成表面纹理的垂直LED表现出468.9 mW的出色光输出功率，发射峰值波长为456 nm。这项工作有助于将基于GaN的垂直LED集成到基于Si的集成电路中。蓝宝石衬底的去除减少了量子限制斯塔克效应（QCSE）的不利影响。研究了集成表面纹理对垂直LED的光提取效率（LEE）的影响。具有350 mA的注入电流，具有集成表面纹理的垂直LED表现出468.9 mW的出色光输出功率，发射峰值波长为456 nm。这项工作有助于将基于GaN的垂直LED集成到基于Si的集成电路中。