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Passivation of CdS/Cu2ZnSnS4 Interface from Surface Treatments of Kesterite‐Based Thin‐Film Solar Cells
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-16 , DOI: 10.1002/pssb.202000308 Natalia M. Martin 1 , Charlotte Platzer-Björkman 1 , Konstantin Simonov 2, 3 , Håkan Rensmo 2 , Tobias Törndahl 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-16 , DOI: 10.1002/pssb.202000308 Natalia M. Martin 1 , Charlotte Platzer-Björkman 1 , Konstantin Simonov 2, 3 , Håkan Rensmo 2 , Tobias Törndahl 1
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Surface treatments of Cu2ZnSnS4 have shown a beneficial effect on the solar cells performance due to a reduction in the open‐circuit voltage (VOC) deficit. Several reasons have been suggested for the VOC deficit, including an unfavorable band alignment at the buffer/Cu2ZnSnS4 interface. Herein, the influence of Cu2ZnSnS4 surface treatment (air exposure and air anneal) on the electronic and chemical properties of Cu2ZnSnS4 and CdS/Cu2ZnSnS4 interfaces is investigated. Using hard X‐ray photoelectron spectroscopy, it is shown that the band alignment at the CdS/Cu2ZnSnS4 interface is not significantly altered by the applied surface treatment. The device enhancement is instead connected to interface passivation for the surface‐treated Cu2ZnSnS4 samples due to the formation of SnOx, which is shown to not be fully removed upon KCN etching prior to the buffer layer deposition. In addition, a surface treatment of the Cu2ZnSnS4 absorber prior to buffer layer deposition influences the growth of CdS buffer, as a thicker CdS‐overlayer is observed to grow on a surface‐treated Cu2ZnSnS4 sample as compared with a nontreated sample. This suggests that a reoptimization of the CdS thickness for a given Cu2ZnSnS4 surface treatment is required.
中文翻译：
基于Kesterite的薄膜太阳能电池的表面处理可钝化CdS / Cu2ZnSnS4界面
由于减少了开路电压（V OC）不足，对Cu 2 ZnSnS 4的表面处理已显示出对太阳能电池性能的有益影响。几个原因已经被建议用于将V OC赤字，包括在缓冲器/ Cu的不利的带对准2个ZnSnS 4接口。在此，Cu 2 ZnSnS 4表面处理（暴露于空气和空气退火）对Cu 2 ZnSnS 4和CdS / Cu 2 ZnSnS 4的电子和化学性质的影响接口进行了调查。使用硬X射线光电子能谱显示，通过表面处理，CdS / Cu 2 ZnSnS 4界面处的能带排列不会显着改变。相反，由于形成了SnO x，该设备的增强功能与表面处理的Cu 2 ZnSnS 4样品的界面钝化有关，而SnO x的形成在缓冲层沉积之前经KCN蚀刻并未完全去除。此外，在缓冲层沉积之前对Cu 2 ZnSnS 4吸收剂进行表面处理会影响CdS缓冲液的生长，因为观察到较厚的CdS覆盖层会在经过表面处理的Cu 2上生长ZnSnS 4样品与未处理样品相比。这表明对于给定的Cu 2 ZnSnS 4表面处理，需要重新优化CdS的厚度。
更新日期：2020-07-16
中文翻译：
基于Kesterite的薄膜太阳能电池的表面处理可钝化CdS / Cu2ZnSnS4界面
由于减少了开路电压（V OC）不足，对Cu 2 ZnSnS 4的表面处理已显示出对太阳能电池性能的有益影响。几个原因已经被建议用于将V OC赤字，包括在缓冲器/ Cu的不利的带对准2个ZnSnS 4接口。在此，Cu 2 ZnSnS 4表面处理（暴露于空气和空气退火）对Cu 2 ZnSnS 4和CdS / Cu 2 ZnSnS 4的电子和化学性质的影响接口进行了调查。使用硬X射线光电子能谱显示，通过表面处理，CdS / Cu 2 ZnSnS 4界面处的能带排列不会显着改变。相反，由于形成了SnO x，该设备的增强功能与表面处理的Cu 2 ZnSnS 4样品的界面钝化有关，而SnO x的形成在缓冲层沉积之前经KCN蚀刻并未完全去除。此外，在缓冲层沉积之前对Cu 2 ZnSnS 4吸收剂进行表面处理会影响CdS缓冲液的生长，因为观察到较厚的CdS覆盖层会在经过表面处理的Cu 2上生长ZnSnS 4样品与未处理样品相比。这表明对于给定的Cu 2 ZnSnS 4表面处理，需要重新优化CdS的厚度。
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