The high wide-band-gap β-gallium oxide (β-Ga₂O₃) has attracted attention for high-voltage and high-speed applications over other wide-band-gap materials. In this work, we propose and demonstrate a β-Ga₂O₃ metal semiconductor field effect transistor (GO-MESFET) with an insulator layer (Si₃N₄) at the bottom of drift region (IL-GO-MESFET) to amend the potential and electric field distributions. In the proposed structure, we improve the electrical properties of the device such as unilateral power gain (U), maximum available gain (MAG), parasitic capacitance, noise figure, and breakdown voltage. The results show the IL-GO-MESFET structure has improved electrical properties and it has the great potential for using in high-voltage and high-speed applications.

中文翻译：

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通过绝缘体层修正电场分布的新型高压高速β-Ga2 O 3 MESFET

高宽带隙β-氧化镓（的β-Ga ₂ ö ₃）受到关注用于在其他宽带隙材料的高电压和高速应用。在这项工作中，我们提出并展示一个的β-Ga ₂ ö ₃金属半导体场效应晶体管（GO-MESFET）与绝缘层（硅₃ Ñ ₄）在漂移区（IL-GO-MESFET）的底部以修改电势和电场分布。在提出的结构中，我们改善了器件的电性能，例如单边功率增益（U），最大可用增益（MAG），寄生电容，噪声系数和击穿电压。结果表明，IL-GO-MESFET结构具有改善的电性能，并且在高压和高速应用中具有巨大的潜力。