Bilayer graphene (BLG) shows great application prospect and potential in next-generation electronics because of its unique electrical and mechanical properties. However, the scalable synthesis of large-area high-quality BLG films is still a great challenge, despite the maturity of chemical vapor deposition (CVD) technique. In this study, we report a robust method to grow BLGs on flat, softened Cu foils by atmospheric pressure CVD. A moderate amount of residual oxygen accelerates the growth of BLG domains while suppressing the formation of multilayers. Raising the nucleation density at low hydrogen pressure efficiently increases the film continuity. Based on the optimized CVD process, the growth of graphene films on 4×4 cm² Cu foils with an average BLG coverage of 76% is achieved. The morphology and structure characterizations demonstrate a high quality of the BLG. Dual gate field-effect transistors are investigated based on AB-stacked BLG, with a tunable bandgap and high carrier mobility of up to 6790 cm² V⁻¹ s⁻¹ at room temperature.

双层石墨烯（BLG）由于其独特的电气和机械性能，在下一代电子产品中显示出巨大的应用前景和潜力。但是，尽管化学气相沉积（CVD）技术已经成熟，但是大面积高质量BLG膜的可扩展合成仍然是一个巨大的挑战。在这项研究中，我们报告了一种通过大气压力CVD在平坦的软化铜箔上生长BLG的可靠方法。适量的残余氧可加快BLG域的生长，同时抑制多层的形成。在低氢气压力下提高成核密度可有效提高膜的连续性。基于优化的CVD工艺，石墨烯薄膜在4×4 cm ²上的生长铜箔的平均BLG覆盖率为76％。形态和结构表征证明了BLG的高质量。研究了基于AB堆叠的BLG的双栅场效应晶体管，该晶体管在室温下具有可调节的带隙和高达6790 cm ² V ^-1 s ^-1的高载流子迁移率。