Cavities and extended defects formed in single crystalline and polycrystalline α -SiC implanted with H + ions are compared. The samples are investigated by cross-sectional transmission electron microscopy. H 2 bubbles are formed during H implantation and H 2 molecules escape the sample to form cavities during thermal annealing at 1100°C. Microcracks and the extended defects prefer to nucleate in single crystalline α -SiC, but not polycrystalline α -SiC. Grain boundaries can account for the experimental results. The formation of cavities on grain boundaries is investigated.

中文翻译：

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注入H后在单晶和多晶α-SiC中形成腔的比较

比较了注入H +离子的单晶和多晶α-SiC中形成的空穴和扩展缺陷。通过横截面透射电子显微镜研究样品。在H注入期间会形成H 2气泡，并且H 2分子会在1100°C的热退火过程中逸出样品，从而形成空腔。微裂纹和扩展缺陷倾向于在单晶α-SiC中成核，而不是在多晶α-SiC中成核。晶界可以解释实验结果。研究了晶界上空洞的形成。