The energy band alignment at the atomic layer deposited Al 2 O 3 / β -Ga 2 O 3 interface with CHF 3 treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS). With additional CHF 3 plasma treatment, the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV; and the valence band offset decreases from 0.21±0.1 eV to −0.16±0.1 eV. As a result, the energy band alignment changes from type I to type II. This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3 d , resulting from the Ga–F bond formation in the F-rich interfacial layer, which is confirmed by the SIMS results.

中文翻译：

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CHF 3处理在Al 2 O 3 /β-Ga 2 O 3界面处的能带对准*

通过X射线光电子能谱和二次离子质谱（SIMS）表征了通过CHF 3处理在原子层沉积的Al 2 O 3 /β-Ga 2 O 3界面处的能带取向。进行额外的CHF 3等离子体处理后，导带偏移从1.95±0.1 eV增加到2.32±0.1 eV。价带偏移从0.21±0.1 eV降低至-0.16±0.1 eV。结果，能带取向从I型变为II型。这种能带取向的转变可能归因于Ga 3 d的核心能级的下移，这是由于富含F的界面层中的Ga-F键形成而引起的，这已由SIMS结果证实。