Due to the lack of surface dangling bonds in graphene, the direct growth of high- κ films via atomic layer deposition (ALD) technique often produces the dielectrics with a poor quality, which hinders its integration in modern semiconductor industry. Previous pretreatment approaches, such as chemical functionalization with ozone and plasma treatments, would inevitably degrade the quality of the underlying graphene. Here, we tackled this problem by utilizing an effective and convenient physical method. In detail, the graphene surface was pretreated with the deposition of thermally evaporated ultrathin Al metal layer prior to the Al 2 O 3 growth by ALD. Then the device was placed in a drying oven for 30 min to be naturally oxidized as a seed layer. With the assistance of an Al oxide seed layer, pinhole-free Al 2 O 3 dielectrics growth on graphene was achieved. No detective defects or disorders were introduced into graphene by Raman charac...

中文翻译：

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超薄氧化铝种子层用于石墨烯上高κAl 2 O 3电介质的原子层沉积

由于石墨烯中缺乏表面悬挂键，因此通过原子层沉积（ALD）技术直接生长高κ膜通常会产生质量较差的电介质，从而阻碍了其在现代半导体工业中的集成。以前的预处理方法，例如用臭氧进行化学功能化和等离子体处理，将不可避免地降低基础石墨烯的质量。在这里，我们通过一种有效且方便的物理方法解决了这个问题。详细地，在通过ALD生长Al 2 O 3之前，通过热蒸发的超薄Al金属层的沉积来预处理石墨烯表面。然后将该装置置于干燥箱中30分钟，使其自然氧化为种子层。借助氧化铝种子层，实现了无针孔的Al 2 O 3介电体在石墨烯上的生长。拉曼特性没有将任何检测缺陷或异常引入石墨烯中。