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Landscape of Charge Puddles in Graphene Nanoribbons on Hexagonal Boron Nitride
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-14 , DOI: 10.1002/pssb.202000317 Yashar Mayamei 1, 2 , Jae Cheol Shin 3 , Kenji Watanabe 4 , Takashi Taniguchi 5 , Myung-Ho Bae 1, 2
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-14 , DOI: 10.1002/pssb.202000317 Yashar Mayamei 1, 2 , Jae Cheol Shin 3 , Kenji Watanabe 4 , Takashi Taniguchi 5 , Myung-Ho Bae 1, 2
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Recently, graphene nanoribbons (GNRs) on hexagonal boron nitride (h‐BN) substrates have been studied to develop high‐mobility devices or devices based on a 1D Moiré superlattice. For this purpose, a device‐level understanding of the charge‐puddle landscape of a GNR/h‐BN structure is needed when the charge puddles function as scattering sources for mobile charge carriers. Here, a puddle landscape is constructed on the basis of an analysis of the temperature dependencies of the conductance of GNR/h‐BN devices at various gate‐voltage values. For low‐, intermediate‐, and high‐temperature regions near the charge‐neutral point (CNP), the puddle size (50–200 nm), distance between neighboring puddles (40–170 nm), and potential depth of the puddles (in a range of 10 meV) in ∼100 nm wide GNR/h‐BN devices are obtained on the basis of Coulomb blockade, 1D variable‐range hopping, and thermally activated hopping, respectively. Based on the constructed puddle landscape, it is also concluded that the confinement‐gap energy for an ∼100 nm wide GNR is similar to that of the thermal activation energy near the CNP in the GNRs. The constructed puddle landscape for GNR/h‐BN devices is consistent with that obtained from scanning tunneling microscopy observations of graphene on an h‐BN structure.
中文翻译：
六方氮化硼上石墨烯纳米带中电荷坑的景观
最近，已经研究了六方氮化硼（h-BN）衬底上的石墨烯纳米带（GNR），以开发高迁移率的器件或基于一维莫尔超晶格的器件。为此，当电荷池充当移动电荷载流子的散射源时，需要在设备级别上了解GNR / h-BN结构的电荷池态势。在此，基于对各种栅极电压值下的GNR / h-BN器件电导的温度依赖性的分析，构建了一个水坑景观。对于靠近电荷中性点（CNP）的低，中和高温区域，水坑大小（50–200 nm），相邻水坑之间的距离（40–170 nm）和水坑的潜在深度（在10毫伏的范围内，根据库仑封锁获得了约100 nm宽的GNR / h-BN器件，一维可变范围跳变和热激活跳变。根据构造的水坑景观，还可以得出结论：约100 nm宽的GNR的限制间隙能量类似于GNR中CNP附近的热活化能。GNR / h-BN设备的水坑景观与h-BN结构上的石墨烯的扫描隧道显微镜观察结果一致。
更新日期：2020-07-14
中文翻译：
六方氮化硼上石墨烯纳米带中电荷坑的景观
最近，已经研究了六方氮化硼（h-BN）衬底上的石墨烯纳米带（GNR），以开发高迁移率的器件或基于一维莫尔超晶格的器件。为此，当电荷池充当移动电荷载流子的散射源时，需要在设备级别上了解GNR / h-BN结构的电荷池态势。在此，基于对各种栅极电压值下的GNR / h-BN器件电导的温度依赖性的分析，构建了一个水坑景观。对于靠近电荷中性点（CNP）的低，中和高温区域，水坑大小（50–200 nm），相邻水坑之间的距离（40–170 nm）和水坑的潜在深度（在10毫伏的范围内，根据库仑封锁获得了约100 nm宽的GNR / h-BN器件，一维可变范围跳变和热激活跳变。根据构造的水坑景观，还可以得出结论：约100 nm宽的GNR的限制间隙能量类似于GNR中CNP附近的热活化能。GNR / h-BN设备的水坑景观与h-BN结构上的石墨烯的扫描隧道显微镜观察结果一致。
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