Abstract In this work, we investigate the electronic transport properties of M/SiC Schottky junctions (M=Ag, Au and Pd). The results show that the band structures of hydrogenated zigzag SiC nanoribbons (ZSiCNRs) and hydrogenated armchair SiC nanoribbons (ASiCNRs) are almost unaffected by their width changes. When the hydrogenated 7-ASiCNR is directly connected to the Ag, Au and Pd electrode, the transmission spectra of three metal-semiconductor junctions show that the Fermi level of metal is pinned to a fixed position in the semiconductor band gap of hydrogenated 7-ASiCNR. The nearly same rectifying current-voltage characteristics are found in three metal-semiconductor junctions. The average rectification ratios of three M/SiC Schottky junctions are all in the neighborhood of 106. In other word, the M/SiC Schottky junction has remarkable application prospect as the candidate for Schottky Diode.

中文翻译：

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M/SiC肖特基结（M=Ag、Au、Pd）电子输运特性的第一性原理研究

摘要 在这项工作中，我们研究了 M/SiC 肖特基结（M=Ag、Au 和 Pd）的电子传输特性。结果表明，氢化锯齿形碳化硅纳米带（ZSiCNRs）和氢化扶手椅碳化硅纳米带（ASiCNRs）的能带结构几乎不受其宽度变化的影响。当氢化 7-ASiCNR 直接连接到 Ag、Au 和 Pd 电极时，三个金属-半导体结的透射光谱表明金属的费米能级被钉扎在氢化 7-ASiCNR 的半导体带隙中的固定位置. 在三个金属-半导体结中发现了几乎相同的整流电流-电压特性。三个 M/SiC 肖特基结的平均整流比都在 106 左右。换句话说，