Gamma-graphyne sheet is a semiconductor with a bandgap of about 0.5 eV. For electronic applications, we need a tunable energy gap. For this purpose, we introduce a tight-binding based method which enables us to study the effects of oriented strains and also electric fields on electronic properties of nanoribbons of monolayer gamma-graphyne. Our results shows that the system has a controllable bandgap in the range of 0–2.9 eV in response to a transverse electric field and strain. Applying a transverse electric field and strain causes a semiconductor-metal phase transition. One can control the bandgap and electronic properties of the system with the help of the above parameters. Our findings indicate that the γ-graphynenanoribbons are promising candidate for applications in high efficiency nanoelectronic devices.

伽玛石墨烯片是带隙约为0.5 eV的半导体。对于电子应用，我们需要一个可调的能隙。为此，我们引入了一种基于紧密结合的方法，该方法使我们能够研究取向应变以及电场对单层γ-石墨烯纳米带电子性能的影响。我们的结果表明，响应于横向电场和应变，该系统在0-2.9 eV范围内具有可控制的带隙。施加横向电场和应变会导致半导体-金属相变。借助以上参数，可以控制系统的带隙和电子特性。我们的发现表明，γ-石墨烯纳米带是在高效纳米电子器件中应用的有前途的候选者。