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Phase transition and electronic tuning in gamma-graphynenanoribbons through uniaxial strain and electric field
Physica E: Low-dimensional Systems and Nanostructures ( IF 2.9 ) Pub Date : 2020-07-15 , DOI: 10.1016/j.physe.2020.114355
Leila Mikaeilzadeh , Farhad Khoeini

Gamma-graphyne sheet is a semiconductor with a bandgap of about 0.5 eV. For electronic applications, we need a tunable energy gap. For this purpose, we introduce a tight-binding based method which enables us to study the effects of oriented strains and also electric fields on electronic properties of nanoribbons of monolayer gamma-graphyne. Our results shows that the system has a controllable bandgap in the range of 0–2.9 eV in response to a transverse electric field and strain. Applying a transverse electric field and strain causes a semiconductor-metal phase transition. One can control the bandgap and electronic properties of the system with the help of the above parameters. Our findings indicate that the γ-graphynenanoribbons are promising candidate for applications in high efficiency nanoelectronic devices.



中文翻译:

通过单轴应变和电场在γ-石墨烯纳米带中进行相变和电子调谐

伽玛石墨烯片是带隙约为0.5 eV的半导体。对于电子应用,我们需要一个可调的能隙。为此,我们引入了一种基于紧密结合的方法,该方法使我们能够研究取向应变以及电场对单层γ-石墨烯纳米带电子性能的影响。我们的结果表明,响应于横向电场和应变,该系统在0-2.9 eV范围内具有可控制的带隙。施加横向电场和应变会导致半导体-金属相变。借助以上参数,可以控制系统的带隙和电子特性。我们的发现表明,γ-石墨烯纳米带是在高效纳米电子器件中应用的有前途的候选者。

更新日期:2020-07-18
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