The hierarchical structure of nanometric thick Zinc Indium Sulfide (ZnIn₂S₄) has been prepared on electrically conductive carbon cloth using a single step hydrothermal method. The surface morphology of the as-synthesized ZnIn₂S₄ (ZIS) is characterized with well interconnected criss cross-network of vertically oriented nanopetals. Owing to the unique morphology offering high aspect ratio, field emission (FE) characteristics of the hierarchical ZIS structure have been investigated at a base pressure of 1x10⁻⁸ mbar. Interestingly, the ZIS emitter exhibited ultralow values of turn-on and threshold fields, 0.84 and 0.95 V/μm, defined at 1 and 10 μA/cm², respectively. Furthermore, maximum emission current density of 1.9 mA/cm² has been obtained from the emitter at relatively lower applied field of 2.07 V/μm. The emission current stability tested at a pre-set value of ~5 and 10 μA over 4 h duration is observed to be very good. The superior FE characteristics are attributed to the high aspect ratio of the vertically oriented nanopetals, their excellent mechanical and chemical sturdiness, and intimate contact with the electrically conducting carbon fibers. The outcome of FE properties indicates the potential applicability of hierarchical ZIS nanostructure emitter, grown on carbon cloth and possessing unique morphology grown on carbon cloth in the practical application in FE based vacuum micro/nano-electronic devices.

使用一步水热法在导电碳布上制备了纳米级厚的硫化铟锌（ZnIn ₂ S ₄）的分层结构。合成后的ZnIn ₂ S ₄（ZIS）的表面形态具有垂直互连的纳米花瓣的良好互连的纵横交错网状结构。由于具有高长宽比的独特形态，已经在1x10 ^-8  mbar的基本压力下研究了分层ZIS结构的场发射（FE）特性。有趣的是，ZIS发射器的导通场和阈值场极低，分别为0.84和0.95 V /μm，定义为1和10μA/ cm ^2。， 分别。此外，在相对较低的2.07 V /μm的外加电场下，从发射极获得了1.9 mA / cm ^2的最大发射电流密度。观察到在4小时的持续时间内〜5和10μA的预设值下测试的发射电流稳定性非常好。优异的FE特性归因于垂直取向的纳米花瓣的高长宽比，出色的机械和化学坚固性以及与导电碳纤维的紧密接触。FE性能的结果表明，在基于FE的真空微/纳米电子器件的实际应用中，在碳布上生长并具有在碳布上生长的独特形态的分层ZIS纳米结构发射体的潜在适用性。