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Temperature-dependent dielectric properties of metal-doped ZnO nanofiller reinforced PVDF nanocomposites
Materials Research Bulletin ( IF 5.4 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.materresbull.2020.111005
Rajesh Sahoo , Suvrajyoti Mishra , Ananthakumar Ramadoss , Smita Mohanty , Swapna Mahapatra , Sanjay Kumar Nayak

Abstract Here, we report on the successful fabrication of organic-inorganic composite films with poly (vinylidene fluoride) (PVDF) polymer and calcium doped zinc oxide (CaZ) and cadmium doped zinc oxide (CdZ) as two different nanofillers. The incorporation of these nanofillers resulted in increased crystalline and piezoelectric β-phase content of PVDF composites. The comparison of temperature-dependent dielectric studies showed enhanced dielectric properties of CaZ-loaded PVDF composites compared to CdZ-based PVDF composites. At 1 kHz, a maximum dielectric permittivity of 26.13 with a dielectric loss of 0.477 was obtained for 10 wt% CaZ-loaded PVDF composite film (10 CaZ-P) at 100 °C. The relaxation time of as-prepared composites showed Arrhenius behavior and lower activation energy for 10 CaZ-P composites (66.24 kJ/mol). For the 10 CaZ-P composite films, the AFM topography analysis showed higher roughness value (16.54 nm) and confirmed the lower activation energy of the same.

中文翻译:

金属掺杂 ZnO 纳米填料增强 PVDF 纳米复合材料的温度相关介电性能

摘要 在这里,我们报告了用聚偏二氟乙烯 (PVDF) 聚合物和掺钙氧化锌 (CaZ) 和掺镉氧化锌 (CdZ) 作为两种不同纳米填料的有机-无机复合薄膜的成功制造。这些纳米填料的掺入导致 PVDF 复合材料的结晶和压电 β 相含量增加。与温度相关的介电研究的比较表明,与基于 CdZ 的 PVDF 复合材料相比,加载 CaZ 的 PVDF 复合材料具有更高的介电性能。在 1 kHz 时,100 °C 下负载 10 wt% CaZ 的 PVDF 复合膜(10 CaZ-P)的最大介电常数为 26.13,介电损耗为 0.477。所制备复合材料的弛豫时间显示出 Arrhenius 行为和较低的 10 CaZ-P 复合材料的活化能 (66.24 kJ/mol)。
更新日期:2020-12-01
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