Orientation-controlled growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) may enable many new electronic and optical applications. However, previous studies reporting aligned growth of WSe₂ usually yielded very small domain sizes. Herein, we introduced gold vapor into the chemical vapor deposition (CVD) process as a catalyst to assist the growth of WSe₂ and successfully achieved highly aligned monolayer WSe₂ triangular flakes grown on c-plane sapphire with large domain sizes (130 µm) and fast growth rate (4.3 µm·s⁻¹). When the aligned WSe₂ domains merged together, a continuous monolayer WSe₂ was formed with good uniformity. After transferring to Si/SiO₂ substrates, field effect transistors were fabricated on the continuous monolayer WSe₂, and an average mobility of 12 cm²·V⁻¹·s⁻¹ was achieved, demonstrating the good quality of the material. This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes.

二维（2D）过渡金属二卤化金属（TMDC）的取向控制生长可以实现许多新的电子和光学应用。但是，以前的研究报道了WSe _2的一致生长，通常产生非常小的域大小。本文中，我们将金蒸气作为催化剂引入化学气相沉积（CVD）工艺中，以协助WSe ₂的生长，并成功实现了在大面积尺寸（130 µm）的c面蓝宝石上生长的高度对准的单层WSe ₂三角形薄片生长速度快（4.3 µm·s ^-1）。当对齐的WSe ₂域合并在一起时，连续的单层WSe ₂形成具有良好的均匀性。转移到Si / SiO ₂衬底后，在连续的单层WSe ₂上制造了场效应晶体管，并实现了12 cm ² ·V ^-1 ·s ^-1的平均迁移率，证明了材料的优良品质。该报告为研究催化金属蒸气在TMDC的CVD工艺中的应用铺平了道路，并为实现对齐的TMDC薄片的生长提供了一种新颖的方法。