A new and improved approach using vertical combs for the differential capacitive sensing of acceleration using silicon-on-insulator (SOI) wafer technology is presented. The design, which supports a ± 30 g operational range demonstrates the enhanced linear range that is achievable using an SOI approach, which overcomes the limitations of the dissolved wafer process (DWP) technology based on the diffusion layer depth in silicon, used for the fabrication of MEMS accelerometers. Two technological approaches are compared, one having the same thicknesses of fixed and movable interdigitated fingers (DWP) and the other having different thicknesses, using an SOI wafer. A remarkable sensitivity improvement, by a factor of up to two, is achieved for the capacitance change per unit g (deltaC g −1 ) using the new differential SOI design presented here. The bandwidth of the device is also improved significantly in the SOI design, compared to the DWP design. Furthermore, the effect of...

中文翻译：

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一种采用绝缘体上硅片技术的新型改进的垂直梳型差分电容传感微加速度计

提出了一种新的，改进的方法，该方法使用垂直梳状结构来利用绝缘体上硅（SOI）晶圆技术对加速度进行差分电容感测。该设计支持±30 g的工作范围，证明了使用SOI方法可实现的增强的线性范围，该方法克服了基于用于制造的硅中扩散层深度的溶解晶片工艺（DWP）技术的局限性MEMS加速度计。比较了两种技术方法，一种使用SOI晶圆，其固定和可移动指状指（DWP）的厚度相同，而另一种具有不同的厚度。使用此处介绍的新型差分SOI设计，每单位g的电容变化（deltaC g -1）可实现高达2倍的显着灵敏度提高。与DWP设计相比，SOI设计中的设备带宽也得到了显着改善。此外，...的作用