Millimeter-wave wireless networks of the new fifth generation (5G) have become a primary focus in the development of the information and telecommunication industries. It is expected that 5G wireless networks will increase the data rates and reduce network latencies by an order of magnitude, which will create new telecommunication services for all sectors of the economy. New electronic components such as 28 GHz (27.5 to 28.35 GHz) single-chip transmit radio frequency (RF) front-end monolithic microwave integrated circuits (MMICs) will be required for the performance and power consumption of millimeter-wave (mm-wave) 5G communication systems. This component includes a 6-bit digital phase shifter, a driver amplifier and a power amplifier. The output power P3dB and power-added efficiency (PAE) are 29 dBm and 19.2% at 28 GHz. The phase shifter root-mean-square (RMS) phase and gain errors are 3° and 0.6 dB at 28 GHz. The chip dimensions are 4.35 × 4.40 mm.

中文翻译：

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用于多通道 5G 无线通信的 28 GHz 单芯片发射射频前端 MMIC

第五代（5G）毫米波无线网络已成为信息通信产业发展的重点。预计 5G 无线网络将提高数据速率并将网络延迟降低一个数量级，这将为所有经济部门创造新的电信服务。毫米波（mm-wave）的性能和功耗将需要28 GHz（27.5至28.35 GHz）单芯片发射射频（RF）前端单片微波集成电路（MMIC）等新型电子元件5G通信系统。该组件包括一个 6 位数字移相器、一个驱动放大器和一个功率放大器。输出功率 P3dB 和功率附加效率 (PAE) 在 28 GHz 时为 29 dBm 和 19.2%。移相器的均方根 (RMS) 相位和增益误差在 28 GHz 时为 3° 和 0.6 dB。芯片尺寸为 4.35 × 4.40 mm。