With the development of the microelectronics, circuit design has become more and more important. In order to improve the accuracy of circuit design, it is necessary to improve the accuracy of the circuit model. This letter proposes an accurate method based on the Angelov model of the Gallium Nitride (GaN) high electron mobility transistors (HEMTs). For Angelov model, the fitting of DC curve is critically important. There are many parameters to fit and modify the fitting curve. Each parameter in the Angelov model has a physical meaning. Some parameters have significant influence on the fitting accuracy of the model. In this letter, the parameters sensitive to the accuracy of the model are evaluated, and formulated into a function of gate voltage and drain voltage. In order to further improve the accuracy of the model, the IV curves are compensated using the error function. A weight function is introduced to correct the error function and improve its compensation selectivity. The proposed method is an universal and effective method that significantly improves the accuracy of the Angelov model. The introduction of the error function and the weight function improve the accuracy obviously compared with the traditional Angelov model.

中文翻译：

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基于Angelov模型且具有误差补偿的高精度GaN HEMT模型

随着微电子学的发展，电路设计变得越来越重要。为了提高电路设计的准确性，有必要提高电路模型的准确性。这封信提出了一种基于氮化镓（GaN）高电子迁移率晶体管（HEMT）的Angelov模型的准确方法。对于Angelov模型，DC曲线的拟合至关重要。有许多参数可以拟合和修改拟合曲线。Angelov模型中的每个参数都有物理含义。一些参数对模型的拟合精度有重要影响。在这封信中，评估了对模型精度敏感的参数，并将其公式化为栅极电压和漏极电压的函数。为了进一步提高模型的准确性，IV曲线使用误差函数进行补偿。引入权函数来校正误差函数并提高其补偿选择性。所提出的方法是一种通用且有效的方法，可以显着提高Angelov模型的准确性。与传统的Angelov模型相比，引入误差函数和权重函数可以显着提高精度。