Thermal transfer inside thin films with quantum-dot is considered. The Boltzmann equation is used to model the energy transport within the film when the quantum dot is thermally disturbed. Equivalent equilibrium temperature is introduced to evaluate the phonon intensity distribution inside the films. Time exponentially increasing temperature is incorporated inside the quantum dot to resemble the thermal disturbance inside the films. The wave dependent equation of phonon energy distribution is accommodated for the formulation of thermal transfer in the silicon and diamond thin films. A numerical code developed is validated through comparison of the thermal conductivity predicted and that obtained from the previous work. The findings show that film thermal conductivity data predicted is in good agreement with those reported in the previous study. Phonon intensity and temperature becomes high in the film around the quantum. Long wavelength phonons enhance phonon intensity distribution in the near region of the film edges; however, boundary scattering causes temperature jump in this region.

考虑了具有量子点的薄膜内部的热传递。当量子点受到热干扰时，玻耳兹曼方程用于模拟薄膜内的能量传输。引入等效平衡温度以评估薄膜内部的声子强度分布。随着时间呈指数增加的温度被并入量子点内部，类似于薄膜内部的热干扰。声子能量分布的波相关方程适用于硅和金刚石薄膜中的热传递公式。通过比较预测的热导率和从先前的工作中获得的热导率，可以验证所开发的数字代码。研究结果表明，预测的薄膜热导率数据与以前的研究报告相吻合。量子附近的薄膜中的声子强度和温度变高。长波长声子增强了膜边缘附近区域中的声子强度分布。但是，边界散射会导致该区域的温度跃变。