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Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.microrel.2020.113736
P. Janioud , C. Poulain , A. Koumela , J.M. Armani , A. Dupret , P. Rey , A. Berthelot , G. Jourdan , P. Morfouli

Abstract This paper proposes a study on the resilience to radiation of MEMS sensors based on piezoresistive transduction by means of suspended silicon nanogauges. It is particularly interesting for applications in severe environment like in space or in nuclear plant. This work shows that the resistivity of a single nanogauge exhibits a sensitivity of 16.5 ppm/kGy whereas the silicon nanogauges bridge used for MEMS transduction is immune to radiation with a variation of −4 ppm/h, like in normal operation. It is the consequence of the differential measurement at the terminals of the two nanogauges that enables to cancel radiation effects.

中文翻译:

伽马辐射对用于MEMS换能的悬浮硅纳米量规桥的影响

摘要 本文提出了一种基于悬浮硅纳米计压阻转换的MEMS传感器的辐射弹性研究。它对于在太空或核电站等恶劣环境中的应用特别有趣。这项工作表明,单个纳米量规的电阻率表现出 16.5 ppm/kGy 的灵敏度,而用于 MEMS 转换的硅纳米量规电桥不受辐射的影响,变化幅度为 -4 ppm/h,就像在正常操作中一样。两个纳米量规的终端进行差分测量的结果是消除辐射效应。
更新日期:2020-11-01
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