Epitaxial strain engineering of luminescent properties in ZnGa2O4:1%Mn thin films was demonstrated by changing both the O2 gas pressure in the deposition chamber and the film thickness. Films were prepared under pressures of 0.2 and 100 mTorr. While, for low-pressure films, the residual strain was constant, for high-pressure films, it relaxed as the thickness of the film increased. Emission spectra showed green emissions ascribed to energy transitions in Mn2+. Although invariant for low-pressure films, the emission peak blueshifted as film thickness increased for high-pressure films. Further investigation revealed the residual strain as the underlying cause of this blueshift.

中文翻译：

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ZnGa2O4:Mn 薄膜发光特性的外延应变工程

通过改变沉积室中的 O2 气压和薄膜厚度，证明了 ZnGa2O4:1%Mn 薄膜发光特性的外延应变工程。在0.2和100毫托的压力下制备薄膜。而对于低压薄膜，残余应变是恒定的，对于高压薄膜，它随着薄膜厚度的增加而松弛。发射光谱显示绿色发射归因于 Mn2+ 中的能量跃迁。尽管对于低压薄膜是不变的，但随着高压薄膜的薄膜厚度增加，发射峰蓝移。进一步的调查揭示了残余应变是这种蓝移的根本原因。