To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

中文翻译：

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室温下非简并硅基横向自旋阀的磁阻比超过 1%

为了增加 n 型非简并 Si 基横向自旋阀 (Si-LSV) 的磁阻 (MR) 比，我们修改了 Si 层中的掺杂分布，并通过改变封盖将更大的局部应变引入 Si 沟道绝缘子。通过这些改进，在 Si-LSV 中实现了 1.4% 的最高 MR 比，通过减少铁磁接触的电阻面积乘积和增加 Si 通道中的动量弛豫时间发挥了重要作用。