Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}.,Physical Review Letters

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Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}.
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-07-13 , DOI: 10.1103/physrevlett.125.036802
Pierre Mallet _{1,

2} , Florian Chiapello _{1,

2} , Hanako Okuno ₃ , Hervé Boukari _{1,

2} , Matthieu Jamet ₄ , Jean-Yves Veuillen _{1,

2}

Affiliation

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer

{WSe}_{2}

intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These

V_{W}

dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged