Using first-principles approaches we find that the Auger recombination in PbSe is anomalous in three distinct ways. First, the direct Auger coefficient is 4 orders of magnitude lower than that of other semiconductors with similar band gaps, a result that can be attributed to the lack of involvement of a heavy-hole band. Second, phonon-assisted indirect Auger recombination prevails, contrary to the common belief that direct Auger is dominant in narrow-gap semiconductors. Third, an unexpectedly weak temperature dependence of the Auger coefficient is observed, which we can now attribute to the indirect nature of the Auger process. The widely accepted explanation of this behavior in terms of an unusual temperature dependence of the band gap is only a secondary effect. Our results elucidate the mechanisms underlying the anomalous Auger recombination in IV-VI semiconductors in general, which is critical for understanding and engineering carrier transport.

中文翻译：

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PbSe中的异常俄歇复合。

使用第一原理方法，我们发现PbSe中的俄歇重组在三种不同的方式上是异常的。首先，直接俄歇系数比具有类似带隙的其他半导体的俄歇系数低4个数量级，其结果可归因于缺乏重空穴能带。第二，声子辅助的间接俄歇复合现象占了上风，这与普遍认为直接俄歇在窄隙半导体中占主导地位的看法相反。第三，观察到俄歇系数的温度依赖性出乎意料的弱，我们现在可以将其归因于俄歇过程的间接性质。就带隙的不寻常的温度依赖性而言，对此行为的广泛接受的解释只是辅助作用。