Lead halide perovskites have attracted increasing interest for their exciting potential in diverse optoelectronic devices. However, their charge transport properties remain elusive, plagued by the issues of excessive contact resistance and large hysteresis in ambient conditions. Here we report a van der Waals integration approach for creating high-performance contacts on monocrystalline halide perovskite thin films with minimum interfacial damage and an atomically clean interface. Compared to the deposited contacts, our van der Waals contacts exhibit two to three orders of magnitude lower contact resistance, enabling systematic transport studies in a wide temperature range. We report a Hall mobility exceeding 2,000 cm² V^–1 s^–1 at around 80 K, an ultralow bimolecular recombination coefficient of 3.5 × 10^–15 cm³ s^–1 and a photocurrent gain >10⁶ in the perovskite thin films. Furthermore, magnetotransport studies reveal a quantum-interference-induced weak localization behaviour with a phase coherence length up to 49 nm at 3.5 K. Our results lay the foundation for exploring new physics in this class of ‘soft-lattice’ materials.

卤化钙钛矿因其在各种光电器件中令人兴奋的潜力而引起了越来越多的兴趣。但是，由于在环境条件下过大的接触电阻和较大的磁滞现象，它们的电荷传输性能仍然难以捉摸。在这里，我们报告了一种范德华（Van der Waals）集成方法，该方法可在单晶卤化钙钛矿薄膜上创建高性能触点，并最大限度地减少界面损伤和原子清洁界面。与沉积的触点相比，我们的范德华触点显示出较低的接触电阻两到三个数量级，从而可以在较宽的温度范围内进行系统的运输研究。我们报告霍尔迁移率超过2,000 cm ²  V ^–1  s ^–1在大约80 K时，钙钛矿薄膜的超低双分子复合系数为3.5×10 ^–15  cm ³  s ^–1，光电流增益> 10 ⁶。此外，磁传输研究揭示了量子干涉引起的弱局域性行为，在3.5 K时的相干长度高达49 nm。我们的结果为探索此类“软晶格”材料的新物理学奠定了基础。