Abstract In this work, a simulation approach to improve the contribution of light generated current by the emitter layer is presented. Single emitter layer made of nanocrystalline carbide of silicon is replaced with a double layer of the same compound material but different elemental composition and optical properties in a microcrystalline silicon-based solar cell. Each layer of the emitter is made of carbides of silicon with different carbon to silicon fractions. The simulated study results showcase short circuit current and efficiency up to 37.86 mAcm−2 and 20.56% respectively for the device with a double emitter layer. The quantum efficiency also justifies an increase in photocurrent in the double layer device. This increase is mainly observed in the wavelength range of photons absorbed by the emitter layer. The calculated emitter saturation current density for the same device is as small as 1.7854 × 10−17 Acm−2. Furthermore, a strong dependence of device parameters on the physical properties of the intrinsic layer is observed. The overall results introduce double emitter as a new approach to improve the photocurrent of heterojunction solar cells.

中文翻译：

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通过 a-Si1-xCx/c-Si 异质结太阳能电池中发射极的双层提高光电流的模拟方法

摘要 在这项工作中，提出了一种模拟方法来提高发射层产生的光电流的贡献。在微晶硅基太阳能电池中，由硅的纳米晶碳化物制成的单发射极层被相同化合物材料但不同元素组成和光学特性的双层取代。发射器的每一层都由碳与硅比例不同的硅碳化物制成。模拟研究结果显示，具有双发射极层的器件的短路电流和效率分别高达 37.86 mAcm-2 和 20.56%。量子效率也证明双层器件中光电流的增加是合理的。这种增加主要在发射层吸收的光子的波长范围内观察到。相同器件的计算发射极饱和电流密度小至 1.7854 × 10−17 Acm−2。此外，还观察到器件参数对本征层物理特性的强烈依赖性。总体结果引入了双发射极作为提高异质结太阳能电池光电流的新方法。