We present theoretical results for the temperature and magnetic field dependence of the thermoelectric response in monolayer graphene systems due to scattering by random charged impurity centers. The main effect of the random charged impurities is considered within the random phase approximation (RPA) and consists in a drastically changed energy dependence of the electron scattering time. The system’s electrical conductivity ($G$), Seebeck coefficient ($S$), thermal conductivity ($\kappa$), and the system’s thermoelectric figure of merit ($ZT$) are considered as function of temperature and external magnetic field. As a general result, the thermoelectric response of the monolayer graphene system is magnetic field dependent in the low temperature regime, but its dependence fades as the temperature is increased.

我们针对单层石墨烯系统中由于随机带电杂质中心的散射而引起的热电响应的温度和磁场依赖性提供了理论结果。在随机相位近似（RPA）内考虑了随机带电杂质的主要影响，其主要取决于电子散射时间的能量依赖性。系统的电导率（$G$），塞贝克系数（$\mathrm{小号}$）， 导热系数 （$\kappa$），以及系统的热电品质因数（$žŤ$）被认为是温度和外部磁场的函数。作为一般结果，单层石墨烯系统的热电响应在低温状态下与磁场有关，但随着温度的升高，其依赖性逐渐​​减弱。