This study demonstrates an Al_0.3Ga_0.7N/GaN heterostructure field-effect transistor (HFET), which features a regrown p-GaN gate layer formed by selective-area regrowth using Si ion implantation at the drain and source area as a mask layer. The surface of the Si-implanted area has distorted lattices compared with the implantation-free area. As such, selective-area growth (SAG) can be achieved when the regrowth process is performed using the Al_0.3Ga_0.7N/GaN heterostructure with selective-area Si implantation as growth templates. The Ti/Al/Ti/Au metal scheme is then deposited on the surface of the Si-implanted Al_0.3Ga_0.7N layer after the regrowth of the p-GaN gate layer. The Ti/Al/Ti/Au contacts without subsequent thermal alloying on the Si-implanted Al_0.3Ga_0.7N layers exhibit a typical specific contact resistance of approximately 4.5 × 10⁻⁴ Ω cm². However, the Ti/Al/Ti/Au contacts deposited on the undoped Al_0.3Ga_0.7N layer exhibit Schottky I–V characteristics even the samples are alloyed at high temperatures. According to the results described above, an Al_0.3Ga_0.7N/GaN HFET with a p-GaN gate layer formed by SAG on the Si-implanted Al_0.3Ga_0.7N layer is also demonstrated in this study.

这项研究演示了Al _0.3 Ga _0.7 N / GaN异质结构场效应晶体管（HFET），其特征在于通过在漏极和源极区域使用Si离子注入作为掩模层，通过选择性区域再生长形成的再生长p-GaN栅极层。与无注入区相比，硅注入区的表面具有变形的晶格。这样，当使用具有选择性区域Si注入的Al _0.3 Ga _0.7 N / GaN异质结构作为生长模板来执行再生过程时，可以实现选择性区域生长（SAG）。然后将Ti / Al / Ti / Au金属方案沉积在注入Si的Al _0.3 Ga _0.7的表面上在p-GaN栅极层再生后的N层。无随后的热合金化的Ti / Al /钛/金触点在Si注入的Al _0.3镓_0.7 N层显示出约为4.5×10典型的固有接触电阻^-4  Ω厘米²。然而，即使样品在高温下合金化，沉积在未掺杂的Al _0.3 Ga _0.7 N层上的Ti / Al / Ti / Au触点也显示出肖特基I–V特性。根据上述结果，在本研究中还证明了具有通过SAG在注入Si的Al _0.3 Ga _0.7 N层上形成的p-GaN栅极层的Al _0.3 Ga _0.7 N / GaN HFET 。