The positive temperature dynamics in the near-band-edge (NBE) photoluminescence (PL) of Nb-doped SrTiO₃ single crystal have been investigated in the temperature range of 10 K–120 K. Intensity of the NBE PL emission with a peak at 3.21 eV has shown increase with increasing temperature. This NBE PL consists of two emission lines with peaks at 3.208 and 3.167 eV. The thermal dynamic in the intensity of the 3.21 eV emission was mainly defined by the temperature behavior of the 3.208 eV transition. The increase in the intensity of the 3.208 eV line with increasing temperature was associated with an increase in the number of electrons thermally excited from the surface. Additionally, a critical point in intensity of the PL at 3.21 eV can be caused by the phase transition, which occurs in Nb-doped SrTiO₃ at 115 K.

在10 K–120 K的温度范围内，研究了Nb掺杂SrTiO ₃单晶的近带边缘（NBE）光致发光（PL）中的正温度动态。NBEPL发射的强度在3.21 eV随温度升高而增加。该NBE PL由两条发射线组成，其峰值分别为3.208和3.167 eV。3.21 eV发射强度中的热动力学主要由3.208 eV跃迁的温度行为定义。3.208 eV线的强度随温度升高而增加，这与从表面热激发的电子数量的增加有关。此外，PL强度在3.21 eV时的临界点可能是由Nb掺杂SrTiO _3中的相变引起的。 在115K。