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Numerical modeling for nanomaterial behavior in a solar unit analyzing entropy generation
Journal of the Taiwan Institute of Chemical Engineers ( IF 5.5 ) Pub Date : 2020-07-13 , DOI: 10.1016/j.jtice.2020.06.005
M. Sheikholeslami , Seyyed Ali Farshad , Ahmad Shafee , Houman Babazadeh

In current contribution, irreversibility and thermal treatment of nanomaterial though a quad-lobed tube equipped with helical tape were investigated. Two styles of tapes were employed: Single quad-channel twisted tape (SQCTT) and Dual quad-channel twisted tape (DQCTT) in which number of tape (TTn) were 1 and 2, respectively. In addition, Reynolds number (Re) and revolution of tape (N) have been assumed as variables. Verification based on previous article with involve of finite volume method, indicates the nice agreement of code. With rise of N, temperature of pipe and plates decreases about 3.94% and 5.05% when TTn=1 and other factors are minimum. Also, with assumption of minimum values of other factors, temperature of plates and tube reduces about 0.16% and 0.13% with rise of TTn. Assuming N = 4, DQCTT, augmenting the Re leads to 3.11% increase in Φs. Also, the highest impact of Re occurs for case with N = 4 and single tape in which 6.94% reduction was reported for Φs with augment of inlet velocity. Lowest decrement percentage with rise of N is about 0.48% which is occurred when Re=20,000 and DQCTT. When N = 4, Re=4000, Φs rises about 5.69% with replacing the DQCTT instead of SQCTT and this case has greatest impact of this parameter. Greatest and lowest impact on Be belong to Re and N, respectively. Rise of Re leads to decline in Be about 9.68% when TTn=2, N = 7. Growth of N results in 0.007% decrement in Be when N = 4, Re=4000. Greatest impact on component of irreversibility belongs to Re while the lowest impacts pertains the number of revolution. Selecting greater N leads to reduction in Sgen,th about 0.48% when TTn=2 and Re=20,000. Sgen,f experiences 35.58% augmentation with rise of TTn when N = 4, Re=4000.



中文翻译:

用于分析熵产生的太阳能单元中纳米材料行为的数值建模

在目前的贡献中,研究了通过装有螺旋带的四叶管对纳米材料的不可逆性和热处理。使用了两种类型的磁带:单四通道双绞带(SQCTT)和双四通道双绞带(DQCTT),其中磁带(TTn)的数量分别为1和2。另外,雷诺数(Re)和带的旋转数(N)被假定为变量。基于前一篇文章的有限体积方法的验证,表明代码很好的吻合。随着N的上升当TTn = 1且其他因素最小时,管板温度分别降低约3.94%和5.05%。同样,假设其他因素的最小值,则板和管的温度随着TTn的升高而分别降低约0.16%和0.13%。假设Ñ  = 4,DQCTT,增强了Re导致在Φ3.11%增加小号。另外,Re组成的最高冲击发生对于情况与Ñ  = 4,并且其中6.94%的降低报道了Φ单个磁带小号与入口速度的扩充。随N的增加,最低的递减百分比约为0.48%,这发生在Re = 20,000和DQCTT时。当Ñ  = 4中,Re = 4000,Φ小号通过替换DQCTT而不是SQCTT可以提高约5.69%,这种情况对这个参数的影响最大。对Be的最大和最小影响分别属于Re和N。当TTn = 2,N  = 7时,Re的上升导致Be下降约9.68%。当N  = 4,Re = 4000时,N的增长导致Be下降0.007%。对不可逆组成部分的最大影响属于Re,而对旋转次数影响最小。选择更大的Ñ导致减少小号根,次约0.48%时TTN = 2和R ë = 20,000。当N  = 4,Re = 4000时S gen,f随TTn的增加而增加35.58%。

更新日期:2020-08-27
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